Journal Article PUBDB-2025-01329

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Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices

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2025
IOP Publ. Bristol

Journal of physics / Condensed matter 37(18), 185502 () [10.1088/1361-648X/adc35d]
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Report No.: arXiv:2410.18758

Abstract: MoS$_2$ has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS$_2$ depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the g-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS$_2$. Here, we exploit naturally n-doped few-layer MoS$_2$ devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS$_2$ devices. Using RD-ESR, we determine the g-factor of few-layer MoS$_2$ to be ∼1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.

Classification:

Contributing Institute(s):
  1. FS-SXQM (FS-SXQM)
Research Program(s):
  1. 632 - Materials – Quantum, Complex and Functional Materials (POF4-632) (POF4-632)
  2. AIM, DFG project G:(GEPRIS)390715994 - EXC 2056: CUI: Advanced Imaging of Matter (390715994) (390715994)
Experiment(s):
  1. No specific instrument

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Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices
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 Record created 2025-04-11, last modified 2025-07-23


Published on 2025-04-01. Available in OpenAccess from 2026-04-01.:
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