Home > Publications database > Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices |
Journal Article | PUBDB-2025-01329 |
; ; ; ; ;
2025
IOP Publ.
Bristol
This record in other databases:
Please use a persistent id in citations: doi:10.1088/1361-648X/adc35d doi:10.3204/PUBDB-2025-01329
Report No.: arXiv:2410.18758
Abstract: MoS$_2$ has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS$_2$ depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the g-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS$_2$. Here, we exploit naturally n-doped few-layer MoS$_2$ devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS$_2$ devices. Using RD-ESR, we determine the g-factor of few-layer MoS$_2$ to be ∼1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.
![]() |
The record appears in these collections: |
Preprint
Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices
Files
Fulltext by arXiv.org
BibTeX |
EndNote:
XML,
Text |
RIS