TY  - JOUR
AU  - Sharma, Chithra H
AU  - Parvangada, Appanna
AU  - Tiemann, Lars
AU  - Rossnagel, Kai
AU  - Martin, Jens
AU  - Blick, Robert H
TI  - Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS<sub>2</sub> devices
JO  - Journal of physics / Condensed matter
VL  - 37
IS  - 18
SN  - 0953-8984
CY  - Bristol
PB  - IOP Publ.
M1  - PUBDB-2025-01329
M1  - arXiv:2410.18758
SP  - 185502
PY  - 2025
AB  - MoS<sub>2</sub> has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS<sub>2</sub> depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the g-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS<sub>2</sub>. Here, we exploit naturally n-doped few-layer MoS<sub>2</sub> devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS<sub>2</sub> devices. Using RD-ESR, we determine the g-factor of few-layer MoS<sub>2</sub> to be ∼1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.
LB  - PUB:(DE-HGF)16
C6  - pmid:40112452
UR  - <Go to ISI:>//WOS:001457382700001
DO  - DOI:10.1088/1361-648X/adc35d
UR  - https://bib-pubdb1.desy.de/record/626186
ER  -