Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices

Sharma, Chithra; Tiemann, Lars; Martin, Jens; Rossnagel, Kai; Blick, Robert H; Parvangada, Appanna

Preprint

PUBDB-2025-01408

Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices

Sharma, C. (Corresponding author)Extern*XFEL.EU* ; Parvangada, A. ; Tiemann, L. ; Rossnagel, K.DESY* ; Martin, J. ; Blick, R. H.

2025

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Report No.: arXiv:2410.18758

Abstract: MoS$_2$ has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS$_2$ depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the g-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS$_2$. Here, we exploit naturally n-doped few-layer MoS$_2$ devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS$_2$ devices. Using RD-ESR, we determine the g-factor of few-layer MoS$_2$ to be ∼1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.

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