000626429 001__ 626429
000626429 005__ 20250427135833.0
000626429 0247_ $$2arXiv$$aarXiv:2410.18758
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000626429 037__ $$aPUBDB-2025-01408
000626429 041__ $$aEnglish
000626429 088__ $$2arXiv$$aarXiv:2410.18758
000626429 082__ $$a530
000626429 1001_ $$0P:(DE-H253)PIP1100928$$aSharma, Chithra$$b0$$eCorresponding author
000626429 245__ $$aResistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices
000626429 260__ $$c2025
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000626429 500__ $$a4 figures, 7 pages
000626429 520__ $$aMoS$_2$ has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS$_2$ depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the g-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS$_2$. Here, we exploit naturally n-doped few-layer MoS$_2$ devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS$_2$ devices. Using RD-ESR, we determine the g-factor of few-layer MoS$_2$ to be ∼1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.
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000626429 536__ $$0G:(GEPRIS)390715994$$aAIM, DFG project G:(GEPRIS)390715994 - EXC 2056: CUI: Advanced Imaging of Matter (390715994)$$c390715994$$x1
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000626429 7001_ $$00009-0003-6083-3661$$aParvangada, Appanna$$b1
000626429 7001_ $$aTiemann, Lars$$b2
000626429 7001_ $$0P:(DE-H253)PIP1007948$$aRossnagel, Kai$$b3
000626429 7001_ $$00000-0001-9548-2839$$aMartin, Jens$$b4
000626429 7001_ $$aBlick, Robert H$$b5
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