001     626429
005     20250427135833.0
024 7 _ |2 arXiv
|a arXiv:2410.18758
024 7 _ |a altmetric:169672293
|2 altmetric
024 7 _ |a pmid:40112452
|2 pmid
037 _ _ |a PUBDB-2025-01408
041 _ _ |a English
082 _ _ |a 530
088 _ _ |2 arXiv
|a arXiv:2410.18758
100 1 _ |0 P:(DE-H253)PIP1100928
|a Sharma, Chithra
|b 0
|e Corresponding author
245 _ _ |a Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices
260 _ _ |c 2025
336 7 _ |0 PUB:(DE-HGF)25
|2 PUB:(DE-HGF)
|a Preprint
|b preprint
|m preprint
|s 1745318121_2747147
336 7 _ |2 ORCID
|a WORKING_PAPER
336 7 _ |0 28
|2 EndNote
|a Electronic Article
336 7 _ |2 DRIVER
|a preprint
336 7 _ |2 BibTeX
|a ARTICLE
336 7 _ |2 DataCite
|a Output Types/Working Paper
500 _ _ |a 4 figures, 7 pages
520 _ _ |a MoS$_2$ has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS$_2$ depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the g-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS$_2$. Here, we exploit naturally n-doped few-layer MoS$_2$ devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS$_2$ devices. Using RD-ESR, we determine the g-factor of few-layer MoS$_2$ to be ∼1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.
536 _ _ |0 G:(DE-HGF)POF4-632
|a 632 - Materials – Quantum, Complex and Functional Materials (POF4-632)
|c POF4-632
|f POF IV
|x 0
536 _ _ |0 G:(GEPRIS)390715994
|a AIM, DFG project G:(GEPRIS)390715994 - EXC 2056: CUI: Advanced Imaging of Matter (390715994)
|c 390715994
|x 1
588 _ _ |a Dataset connected to arXivarXiv, CrossRef, Journals: bib-pubdb1.desy.de
693 _ _ |0 EXP:(DE-MLZ)NOSPEC-20140101
|5 EXP:(DE-MLZ)NOSPEC-20140101
|e No specific instrument
|x 0
700 1 _ |0 0009-0003-6083-3661
|a Parvangada, Appanna
|b 1
700 1 _ |a Tiemann, Lars
|b 2
700 1 _ |0 P:(DE-H253)PIP1007948
|a Rossnagel, Kai
|b 3
700 1 _ |0 0000-0001-9548-2839
|a Martin, Jens
|b 4
700 1 _ |a Blick, Robert H
|b 5
856 4 _ |u https://bib-pubdb1.desy.de/record/626429/files/2410.18758v2.pdf
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856 4 _ |u https://bib-pubdb1.desy.de/record/626429/files/2410.18758v2.pdf?subformat=pdfa
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909 C O |o oai:bib-pubdb1.desy.de:626429
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|a European XFEL
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910 1 _ |0 I:(DE-HGF)0
|6 P:(DE-H253)PIP1100928
|a External Institute
|b 0
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910 1 _ |0 I:(DE-588b)2008985-5
|6 P:(DE-H253)PIP1007948
|a Deutsches Elektronen-Synchrotron
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913 1 _ |0 G:(DE-HGF)POF4-632
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|a DE-HGF
|b Forschungsbereich Materie
|l Von Materie zu Materialien und Leben
|v Materials – Quantum, Complex and Functional Materials
|x 0
915 _ _ |a Published
|0 StatID:(DE-HGF)0580
|2 StatID
920 1 _ |0 I:(DE-H253)FS-SXQM-20190201
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980 _ _ |a preprint
980 _ _ |a VDB
980 _ _ |a I:(DE-H253)FS-SXQM-20190201
980 _ _ |a UNRESTRICTED


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