Home > Publications database > Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices > print |
001 | 626429 | ||
005 | 20250427135833.0 | ||
024 | 7 | _ | |2 arXiv |a arXiv:2410.18758 |
024 | 7 | _ | |a altmetric:169672293 |2 altmetric |
024 | 7 | _ | |a pmid:40112452 |2 pmid |
037 | _ | _ | |a PUBDB-2025-01408 |
041 | _ | _ | |a English |
082 | _ | _ | |a 530 |
088 | _ | _ | |2 arXiv |a arXiv:2410.18758 |
100 | 1 | _ | |0 P:(DE-H253)PIP1100928 |a Sharma, Chithra |b 0 |e Corresponding author |
245 | _ | _ | |a Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS$_2$ devices |
260 | _ | _ | |c 2025 |
336 | 7 | _ | |0 PUB:(DE-HGF)25 |2 PUB:(DE-HGF) |a Preprint |b preprint |m preprint |s 1745318121_2747147 |
336 | 7 | _ | |2 ORCID |a WORKING_PAPER |
336 | 7 | _ | |0 28 |2 EndNote |a Electronic Article |
336 | 7 | _ | |2 DRIVER |a preprint |
336 | 7 | _ | |2 BibTeX |a ARTICLE |
336 | 7 | _ | |2 DataCite |a Output Types/Working Paper |
500 | _ | _ | |a 4 figures, 7 pages |
520 | _ | _ | |a MoS$_2$ has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS$_2$ depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the g-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS$_2$. Here, we exploit naturally n-doped few-layer MoS$_2$ devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS$_2$ devices. Using RD-ESR, we determine the g-factor of few-layer MoS$_2$ to be ∼1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements. |
536 | _ | _ | |0 G:(DE-HGF)POF4-632 |a 632 - Materials – Quantum, Complex and Functional Materials (POF4-632) |c POF4-632 |f POF IV |x 0 |
536 | _ | _ | |0 G:(GEPRIS)390715994 |a AIM, DFG project G:(GEPRIS)390715994 - EXC 2056: CUI: Advanced Imaging of Matter (390715994) |c 390715994 |x 1 |
588 | _ | _ | |a Dataset connected to arXivarXiv, CrossRef, Journals: bib-pubdb1.desy.de |
693 | _ | _ | |0 EXP:(DE-MLZ)NOSPEC-20140101 |5 EXP:(DE-MLZ)NOSPEC-20140101 |e No specific instrument |x 0 |
700 | 1 | _ | |0 0009-0003-6083-3661 |a Parvangada, Appanna |b 1 |
700 | 1 | _ | |a Tiemann, Lars |b 2 |
700 | 1 | _ | |0 P:(DE-H253)PIP1007948 |a Rossnagel, Kai |b 3 |
700 | 1 | _ | |0 0000-0001-9548-2839 |a Martin, Jens |b 4 |
700 | 1 | _ | |a Blick, Robert H |b 5 |
856 | 4 | _ | |u https://bib-pubdb1.desy.de/record/626429/files/2410.18758v2.pdf |y Restricted |
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910 | 1 | _ | |0 I:(DE-588)1043621512 |6 P:(DE-H253)PIP1100928 |a European XFEL |b 0 |k XFEL.EU |
910 | 1 | _ | |0 I:(DE-HGF)0 |6 P:(DE-H253)PIP1100928 |a External Institute |b 0 |k Extern |
910 | 1 | _ | |0 I:(DE-588b)2008985-5 |6 P:(DE-H253)PIP1007948 |a Deutsches Elektronen-Synchrotron |b 3 |k DESY |
913 | 1 | _ | |0 G:(DE-HGF)POF4-632 |1 G:(DE-HGF)POF4-630 |2 G:(DE-HGF)POF4-600 |3 G:(DE-HGF)POF4 |4 G:(DE-HGF)POF |a DE-HGF |b Forschungsbereich Materie |l Von Materie zu Materialien und Leben |v Materials – Quantum, Complex and Functional Materials |x 0 |
915 | _ | _ | |a Published |0 StatID:(DE-HGF)0580 |2 StatID |
920 | 1 | _ | |0 I:(DE-H253)FS-SXQM-20190201 |k FS-SXQM |l FS-SXQM |x 0 |
980 | _ | _ | |a preprint |
980 | _ | _ | |a VDB |
980 | _ | _ | |a I:(DE-H253)FS-SXQM-20190201 |
980 | _ | _ | |a UNRESTRICTED |
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