%0 Journal Article
%A Sharma, Chithra H
%A Parvangada, Appanna
%A Tiemann, Lars
%A Rossnagel, Kai
%A Martin, Jens
%A Blick, Robert H
%T Resistively detected electron spin resonance and g- factor in few-layer exfoliated MoS<sub>2</sub> devices
%J Journal of physics / Condensed matter
%V 37
%N 18
%@ 0953-8984
%C Bristol
%I IOP Publ.
%M PUBDB-2025-01329
%M arXiv:2410.18758
%P 185502
%D 2025
%X MoS<sub>2</sub> has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS<sub>2</sub> depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the g-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS<sub>2</sub>. Here, we exploit naturally n-doped few-layer MoS<sub>2</sub> devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS<sub>2</sub> devices. Using RD-ESR, we determine the g-factor of few-layer MoS<sub>2</sub> to be ∼1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:40112452
%U <Go to ISI:>//WOS:001457382700001
%R 10.1088/1361-648X/adc35d
%U https://bib-pubdb1.desy.de/record/626186