Journal Article

PUBDB-2021-02450

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

Feneberg, M. (Corresponding author)Extern* ; Romero, F. ; Goldhahn, R. ; Wernicke, T. ; Reich, C. ; Stellmach, J. ; Mehnke, F. ; Knauer, A. ; Weyers, M. ; Kneissl, M.

2021
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: doi:10.1063/5.0047021

Abstract: Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.

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Contributing Institute(s):

1. DOOR-User (DOOR ; HAS-User)

Research Program(s):

1. 899 - ohne Topic (POF4-899) (POF4-899)
2. FS-Proposal: I-20100005 (I-20100005) (I-20100005)

Experiment(s):

1. DORIS Beamline I (DORIS III)

Appears in the scientific report 2021

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; Nationallizenz ; PubMed Central ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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