%0 Journal Article
%A Feneberg, Martin
%A Romero, Fátima
%A Goldhahn, Rüdiger
%A Wernicke, Tim
%A Reich, Christoph
%A Stellmach, Joachim
%A Mehnke, Frank
%A Knauer, Arne
%A Weyers, Markus
%A Kneissl, Michael
%T Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
%J Applied physics letters
%V 118
%N 20
%@ 1077-3118
%C Melville, NY
%I American Inst. of Physics
%M PUBDB-2021-02450
%P 202101
%D 2021
%X Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000651189100016
%R 10.1063/5.0047021
%U https://bib-pubdb1.desy.de/record/459165