TY  - JOUR
AU  - Feneberg, Martin
AU  - Romero, Fátima
AU  - Goldhahn, Rüdiger
AU  - Wernicke, Tim
AU  - Reich, Christoph
AU  - Stellmach, Joachim
AU  - Mehnke, Frank
AU  - Knauer, Arne
AU  - Weyers, Markus
AU  - Kneissl, Michael
TI  - Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
JO  - Applied physics letters
VL  - 118
IS  - 20
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - PUBDB-2021-02450
SP  - 202101
PY  - 2021
AB  - Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000651189100016
DO  - DOI:10.1063/5.0047021
UR  - https://bib-pubdb1.desy.de/record/459165
ER  -