FS-Proposal: I-20100005

IdentifierG:(DE-H253)I-20100005

 

Recent Publications

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Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
Applied physics letters 118(20), 202101 () [10.1063/5.0047021]  GO  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Negative spin-exchange splitting in the exciton fine structure of AlN
Applied physics letters 102, 052112 () [10.1063/1.4790645]  GO Embargoed OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and $Al_{0.94}Ga_{0.06}N$
Applied physics letters 99, 021903 () [10.1063/1.3610469]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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 Record created 2014-10-31, last modified 2015-05-07



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