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024 7 _ |a 1077-3118
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100 1 _ |a Feneberg, Martin
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245 _ _ |a Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
260 _ _ |a Melville, NY
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|b American Inst. of Physics
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520 _ _ |a Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.
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700 1 _ |a Romero, Fátima
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700 1 _ |a Goldhahn, Rüdiger
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700 1 _ |a Wernicke, Tim
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700 1 _ |a Reich, Christoph
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700 1 _ |a Stellmach, Joachim
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700 1 _ |a Mehnke, Frank
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700 1 _ |a Knauer, Arne
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700 1 _ |a Weyers, Markus
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700 1 _ |a Kneissl, Michael
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773 _ _ |a 10.1063/5.0047021
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