| Home > Publications database > Origin of defect luminescence in ultraviolet emitting AlGaN diode structures > print |
| 001 | 459165 | ||
| 005 | 20250724175459.0 | ||
| 024 | 7 | _ | |a 10.1063/5.0047021 |2 doi |
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| 024 | 7 | _ | |a 1077-3118 |2 ISSN |
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| 100 | 1 | _ | |a Feneberg, Martin |0 P:(DE-H253)PIP1011741 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Origin of defect luminescence in ultraviolet emitting AlGaN diode structures |
| 260 | _ | _ | |a Melville, NY |c 2021 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells. |
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| 700 | 1 | _ | |a Romero, Fátima |0 0000-0002-3940-8009 |b 1 |
| 700 | 1 | _ | |a Goldhahn, Rüdiger |0 0000-0001-8296-2331 |b 2 |
| 700 | 1 | _ | |a Wernicke, Tim |0 0000-0002-5472-8166 |b 3 |
| 700 | 1 | _ | |a Reich, Christoph |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Stellmach, Joachim |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Mehnke, Frank |0 0000-0001-5406-0832 |b 6 |
| 700 | 1 | _ | |a Knauer, Arne |0 0000-0002-0996-6552 |b 7 |
| 700 | 1 | _ | |a Weyers, Markus |0 0000-0001-7431-4166 |b 8 |
| 700 | 1 | _ | |a Kneissl, Michael |0 0000-0003-1476-598X |b 9 |
| 773 | _ | _ | |a 10.1063/5.0047021 |g Vol. 118, no. 20, p. 202101 - |0 PERI:(DE-600)1469436-0 |n 20 |p 202101 |t Applied physics letters |v 118 |y 2021 |x 1077-3118 |
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