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000459165 1001_ $$0P:(DE-H253)PIP1011741$$aFeneberg, Martin$$b0$$eCorresponding author
000459165 245__ $$aOrigin of defect luminescence in ultraviolet emitting AlGaN diode structures
000459165 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2021
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000459165 520__ $$aLight emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.
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000459165 7001_ $$00000-0002-3940-8009$$aRomero, Fátima$$b1
000459165 7001_ $$00000-0001-8296-2331$$aGoldhahn, Rüdiger$$b2
000459165 7001_ $$00000-0002-5472-8166$$aWernicke, Tim$$b3
000459165 7001_ $$0P:(DE-HGF)0$$aReich, Christoph$$b4
000459165 7001_ $$0P:(DE-HGF)0$$aStellmach, Joachim$$b5
000459165 7001_ $$00000-0001-5406-0832$$aMehnke, Frank$$b6
000459165 7001_ $$00000-0002-0996-6552$$aKnauer, Arne$$b7
000459165 7001_ $$00000-0001-7431-4166$$aWeyers, Markus$$b8
000459165 7001_ $$00000-0003-1476-598X$$aKneissl, Michael$$b9
000459165 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/5.0047021$$gVol. 118, no. 20, p. 202101 -$$n20$$p202101$$tApplied physics letters$$v118$$x1077-3118$$y2021
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