Contribution to a conference proceedings/Journal Article PUBDB-2023-01023

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Radiation damage in silicon detectors



2003
North-Holland Publ. Co. Amsterdam

9th European Symposium on Semiconductor Detectors: New Developments in Radiation Detectors, Schloss ElmauSchloss Elmau, Germany, 23 Jun 2002 - 27 Jun 20022002-06-232002-06-27 Nuclear instruments & methods in physics research / A 512(1-2), 30 - 43 () [10.1016/S0168-9002(03)01874-6]
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Report No.: DESY-02-199A

Abstract: Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

Keyword(s): talk: Schloss Elmau 2002/06/23 ; semiconductor detector ; radiation: damage ; photon: radiation ; hadron: radiation ; CERN LHC Coll ; bibliography ; 85.30.De ; 29.40.Gx ; 29.40.Wk ; Silicon detectors ; Defect engineering ; Radiation damage ; NIEL ; Proton- ; neutron- ; π-irradiation ; Defect analysis

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Note: Part of arXiv physics/0211118

Contributing Institute(s):
  1. DESY Retrocat (DESY(-2012))
Research Program(s):
  1. 899 - ohne Topic (POF4-899) (POF4-899)
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  1. No specific instrument

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Radiation damage in silicon detectors
14 pp. () [10.3204/PUBDB-2023-01027]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS


 Record created 2023-03-03, last modified 2025-08-04


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