TY  - JOUR
AU  - Lindstrom, G.
TI  - Radiation damage in silicon detectors
JO  - Nuclear instruments & methods in physics research / A
VL  - 512
IS  - 1-2
SN  - 0167-5087
CY  - Amsterdam
PB  - North-Holland Publ. Co.
M1  - PUBDB-2023-01023
M1  - DESY-02-199A
SP  - 30 - 43
PY  - 2003
N1  - Part of arXiv physics/0211118
AB  - Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.
T2  - 9th European Symposium on Semiconductor Detectors: New Developments in Radiation Detectors
CY  - 23 Jun 2002 - 27 Jun 2002, Schloss Elmau (Germany)
Y2  - 23 Jun 2002 - 27 Jun 2002
M2  - Schloss Elmau, Germany
KW  - talk: Schloss Elmau 2002/06/23 (INSPIRE)
KW  - semiconductor detector (INSPIRE)
KW  - radiation: damage (INSPIRE)
KW  - photon: radiation (INSPIRE)
KW  - hadron: radiation (INSPIRE)
KW  - CERN LHC Coll (INSPIRE)
KW  - bibliography (INSPIRE)
KW  - 85.30.De (autogen)
KW  - 29.40.Gx (autogen)
KW  - 29.40.Wk (autogen)
KW  - Silicon detectors (autogen)
KW  - Defect engineering (autogen)
KW  - Radiation damage (autogen)
KW  - NIEL (autogen)
KW  - Proton- (autogen)
KW  - neutron- (autogen)
KW  - π-irradiation (autogen)
KW  - Defect analysis (autogen)
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000186290000005
DO  - DOI:10.1016/S0168-9002(03)01874-6
UR  - https://bib-pubdb1.desy.de/record/579980
ER  -