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000579980 1112_ $$a9th European Symposium on Semiconductor Detectors: New Developments in Radiation Detectors$$cSchloss Elmau$$d2002-06-23 - 2002-06-27$$wGermany
000579980 245__ $$aRadiation damage in silicon detectors
000579980 260__ $$aAmsterdam$$bNorth-Holland Publ. Co.$$c2003
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000579980 520__ $$aRadiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.
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000579980 650_7 $$2INSPIRE$$asemiconductor detector
000579980 650_7 $$2INSPIRE$$aradiation: damage
000579980 650_7 $$2INSPIRE$$aphoton: radiation
000579980 650_7 $$2INSPIRE$$ahadron: radiation
000579980 650_7 $$2INSPIRE$$aCERN LHC Coll
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000579980 650_7 $$2autogen$$aSilicon detectors
000579980 650_7 $$2autogen$$aDefect engineering
000579980 650_7 $$2autogen$$aRadiation damage
000579980 650_7 $$2autogen$$aNIEL
000579980 650_7 $$2autogen$$aProton-
000579980 650_7 $$2autogen$$aneutron-
000579980 650_7 $$2autogen$$aπ-irradiation
000579980 650_7 $$2autogen$$aDefect analysis
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