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| Report | PUBDB-2023-01027 |
2003
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Please use a persistent id in citations: doi:10.3204/PUBDB-2023-01027
Report No.: DESY-02-199A
Abstract: Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.
Keyword(s): talk: Schloss Elmau 2002/06/23 ; semiconductor detector ; radiation: damage ; photon: radiation ; hadron: radiation ; CERN LHC Coll ; bibliography ; 85.30.De ; 29.40.Gx ; 29.40.Wk ; Silicon detectors ; Defect engineering ; Radiation damage ; NIEL ; Proton- ; neutron- ; π-irradiation ; Defect analysis
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Contribution to a conference proceedings/Journal Article
Radiation damage in silicon detectors
9th European Symposium on Semiconductor Detectors: New Developments in Radiation Detectors, Schloss ElmauSchloss Elmau, Germany, 23 Jun 2002 - 27 Jun 2002
Nuclear instruments & methods in physics research / A 512(1-2), 30 - 43 (2003) [10.1016/S0168-9002(03)01874-6]
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