TY  - RPRT
AU  - Lindstrom, G.
TI  - Radiation damage in silicon detectors
IS  - DESY-02-199A
M1  - PUBDB-2023-01027
M1  - DESY-02-199A
SP  - 14
PY  - 2003
N1  - Part of arXiv physics/0211118
AB  - Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.
KW  - talk: Schloss Elmau 2002/06/23 (INSPIRE)
KW  - semiconductor detector (INSPIRE)
KW  - radiation: damage (INSPIRE)
KW  - photon: radiation (INSPIRE)
KW  - hadron: radiation (INSPIRE)
KW  - CERN LHC Coll (INSPIRE)
KW  - bibliography (INSPIRE)
KW  - 85.30.De (autogen)
KW  - 29.40.Gx (autogen)
KW  - 29.40.Wk (autogen)
KW  - Silicon detectors (autogen)
KW  - Defect engineering (autogen)
KW  - Radiation damage (autogen)
KW  - NIEL (autogen)
KW  - Proton- (autogen)
KW  - neutron- (autogen)
KW  - π-irradiation (autogen)
KW  - Defect analysis (autogen)
LB  - PUB:(DE-HGF)29
DO  - DOI:10.3204/PUBDB-2023-01027
UR  - https://bib-pubdb1.desy.de/record/579984
ER  -