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Journal Article | PUBDB-2023-00513 |
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2023
American Inst. of Physics
Melville, NY
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Please use a persistent id in citations: doi:10.1063/5.0148430 doi:10.3204/PUBDB-2023-00513
Abstract: Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated us- ing photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation fol- lowed by pulsed laser annealing. The dopant concentration is variable and high above the sol- ubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these con- figurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expecta- tions. For multi-Te configurations the results contribute to understanding the exceptional ac- tivation of free charge carriers in hyperdopingof chalcogens in silicon.
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