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@ARTICLE{Hoesch:517523,
      author       = {Hoesch, Moritz and Fedchenko, Olena and Wang, Mao and
                      Schlueter, Christoph and Potorochin, Dmitrii and Medjanik,
                      Katerina and Babenkov, Sergey and Ciobanu, Anca Simona and
                      Winkelmann, Aimo and Elmers, Hans-Joachim and Zhou,
                      Shengqiang and Helm, Manfred and Schoenhense, Gerd},
      title        = {{A}ctive {S}ites of {T}e-hyperdoped {S}ilicon by {H}ard
                      {X}-ray {P}hotoelectron {S}pectroscopy},
      journal      = {Applied physics letters},
      volume       = {122},
      number       = {25},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {PUBDB-2023-00513},
      pages        = {252108},
      year         = {2023},
      note         = {Journal has been changed to Applied Physics Letters AIP},
      abstract     = {Multiple dopant configurations of Te impurities in close
                      vicinity in silicon are investigated us- ing photoelectron
                      spectroscopy, photoelectron diffraction, and Bloch wave
                      calculations. The samples are prepared by ion implantation
                      fol- lowed by pulsed laser annealing. The dopant
                      concentration is variable and high above the sol- ubility
                      limit of Te in silicon. The configurations in question are
                      distinguished from isolated Te impurities by a strong
                      chemical core level shift. While Te clusters are found to
                      form only in very small concentrations, multi-Te
                      configurations of type dimer or up to four Te ions
                      surrounding a vacancy are clearly identified. For these con-
                      figurations a substitutional site location of Te is found to
                      match the data best in all cases. For isolated Te ions this
                      matches the expecta- tions. For multi-Te configurations the
                      results contribute to understanding the exceptional ac-
                      tivation of free charge carriers in hyperdopingof chalcogens
                      in silicon.},
      cin          = {FS-PETRA-S / DOOR ; HAS-User / FS-TI},
      ddc          = {530},
      cid          = {I:(DE-H253)FS-PETRA-S-20210408 /
                      I:(DE-H253)HAS-User-20120731 / I:(DE-H253)FS-TI-20120731},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / 6G3 - PETRA III (DESY) (POF4-6G3) /
                      DFG project 268565370 - TRR 173: Spin+X: Der Spin in seiner
                      kollektiven Umgebung (268565370) / DFG project 445049905 -
                      MIR Breitband-Photodetektor bei Raumtemperatur auf der Basis
                      von Si:Te für die Integration auf Wafer-Ebene (445049905)},
      pid          = {G:(DE-HGF)POF4-632 / G:(DE-HGF)POF4-6G3 /
                      G:(GEPRIS)268565370 / G:(GEPRIS)445049905},
      experiment   = {EXP:(DE-H253)P-P22-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001018500000005},
      doi          = {10.1063/5.0148430},
      url          = {https://bib-pubdb1.desy.de/record/517523},
}