Journal Article PUBDB-2023-00513

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Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy

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2023
American Inst. of Physics Melville, NY

Applied physics letters 122(25), 252108 () [10.1063/5.0148430]
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Abstract: Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated us- ing photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation fol- lowed by pulsed laser annealing. The dopant concentration is variable and high above the sol- ubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these con- figurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expecta- tions. For multi-Te configurations the results contribute to understanding the exceptional ac- tivation of free charge carriers in hyperdopingof chalcogens in silicon.

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Note: Journal has been changed to Applied Physics Letters AIP

Contributing Institute(s):
  1. PETRA-S (FS-PETRA-S)
  2. DOOR-User (DOOR ; HAS-User)
  3. FS-Arbeitsgruppe (FS-TI)
Research Program(s):
  1. 632 - Materials – Quantum, Complex and Functional Materials (POF4-632) (POF4-632)
  2. 6G3 - PETRA III (DESY) (POF4-6G3) (POF4-6G3)
  3. DFG project 268565370 - TRR 173: Spin+X: Der Spin in seiner kollektiven Umgebung (268565370) (268565370)
  4. DFG project 445049905 - MIR Breitband-Photodetektor bei Raumtemperatur auf der Basis von Si:Te für die Integration auf Wafer-Ebene (445049905) (445049905)
Experiment(s):
  1. PETRA Beamline P22 (PETRA III)

Appears in the scientific report 2023
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 Record created 2023-01-26, last modified 2025-07-15


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