%0 Journal Article
%A Hoesch, Moritz
%A Fedchenko, Olena
%A Wang, Mao
%A Schlueter, Christoph
%A Potorochin, Dmitrii
%A Medjanik, Katerina
%A Babenkov, Sergey
%A Ciobanu, Anca Simona
%A Winkelmann, Aimo
%A Elmers, Hans-Joachim
%A Zhou, Shengqiang
%A Helm, Manfred
%A Schoenhense, Gerd
%T Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy
%J Applied physics letters
%V 122
%N 25
%@ 0003-6951
%C Melville, NY
%I American Inst. of Physics
%M PUBDB-2023-00513
%P 252108
%D 2023
%Z Journal has been changed to Applied Physics Letters AIP
%X Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated us- ing photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation fol- lowed by pulsed laser annealing. The dopant concentration is variable and high above the sol- ubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these con- figurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expecta- tions. For multi-Te configurations the results contribute to understanding the exceptional ac- tivation of free charge carriers in hyperdopingof chalcogens in silicon.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001018500000005
%R 10.1063/5.0148430
%U https://bib-pubdb1.desy.de/record/517523