TY  - JOUR
AU  - Hoesch, Moritz
AU  - Fedchenko, Olena
AU  - Wang, Mao
AU  - Schlueter, Christoph
AU  - Potorochin, Dmitrii
AU  - Medjanik, Katerina
AU  - Babenkov, Sergey
AU  - Ciobanu, Anca Simona
AU  - Winkelmann, Aimo
AU  - Elmers, Hans-Joachim
AU  - Zhou, Shengqiang
AU  - Helm, Manfred
AU  - Schoenhense, Gerd
TI  - Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy
JO  - Applied physics letters
VL  - 122
IS  - 25
SN  - 0003-6951
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - PUBDB-2023-00513
SP  - 252108
PY  - 2023
N1  - Journal has been changed to Applied Physics Letters AIP
AB  - Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated us- ing photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation fol- lowed by pulsed laser annealing. The dopant concentration is variable and high above the sol- ubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these con- figurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expecta- tions. For multi-Te configurations the results contribute to understanding the exceptional ac- tivation of free charge carriers in hyperdopingof chalcogens in silicon.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001018500000005
DO  - DOI:10.1063/5.0148430
UR  - https://bib-pubdb1.desy.de/record/517523
ER  -