guest ::
| Home > Publications database > Pressure-Dependent Relaxation in the Photoexcited Mott Insulator $\mathrm{ET–F_2TCNQ}$: Influence of Hopping and Correlations on Quasiparticle Recombination Rates |
| Home > Publications database > Pressure-Dependent Relaxation in the Photoexcited Mott Insulator $\mathrm{ET–F_2TCNQ}$: Influence of Hopping and Correlations on Quasiparticle Recombination Rates |
| Journal Article | PUBDB-2016-03175 |
; ; ; ; ; ; ; ; ; ; ; ; ; ;
2014
APS
College Park, Md.
This record in other databases: 
Please use a persistent id in citations: doi:10.1103/PhysRevLett.112.117801
Abstract: We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET–F$_2$TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.
; 
; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz
; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
|
The record appears in these collections: |
PDF
PDF (PDFA)