%0 Journal Article
%A Mitrano, M.
%A Cotugno, G.
%A Clark, S. R.
%A Singla, R.
%A Kaiser, S.
%A Stähler, J.
%A Beyer, R.
%A Dressel, M.
%A Baldassarre, L.
%A Nicoletti, D.
%A Perucchi, A.
%A Hasegawa, T.
%A Okamoto, H.
%A Jaksch, D.
%A Cavalleri, A.
%T Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET–F<sub>2</sub>TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates
%J Physical review letters
%V 112
%N 11
%@ 1079-7114
%C College Park, Md.
%I APS
%M PUBDB-2016-03175
%P 117801
%D 2014
%X We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET–F<sub>2</sub>TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000332925900038
%$ pmid:24702420
%R 10.1103/PhysRevLett.112.117801
%U https://bib-pubdb1.desy.de/record/307321