Pressure-Dependent Relaxation in the Photoexcited Mott Insulator $\mathrm{ET–F_2TCNQ}$: Influence of Hopping and Correlations on Quasiparticle Recombination Rates

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Pressure-Dependent Relaxation in the Photoexcited Mott Insulator $\mathrm{ET–F_2TCNQ}$: Influence of Hopping and Correlations on Quasiparticle Recombination Rates - PUBDB-2016-03175

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