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| 024 | 7 | _ | |a 10.1103/PhysRevLett.112.117801 |2 doi |
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| 100 | 1 | _ | |a Mitrano, M. |0 P:(DE-H253)PIP1013512 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Pressure-Dependent Relaxation in the Photoexcited Mott Insulator $\mathrm{ET–F_2TCNQ}$: Influence of Hopping and Correlations on Quasiparticle Recombination Rates |
| 260 | _ | _ | |a College Park, Md. |c 2014 |b APS |
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| 520 | _ | _ | |a We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET–F$_2$TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination. |
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| 700 | 1 | _ | |a Cotugno, G. |0 P:(DE-H253)PIP1012176 |b 1 |
| 700 | 1 | _ | |a Clark, S. R. |0 P:(DE-HGF)0 |b 2 |
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| 700 | 1 | _ | |a Kaiser, S. |0 P:(DE-HGF)0 |b 4 |
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| 773 | _ | _ | |a 10.1103/PhysRevLett.112.117801 |g Vol. 112, no. 11, p. 117801 |0 PERI:(DE-600)1472655-5 |n 11 |p 117801 |t Physical review letters |v 112 |y 2014 |x 1079-7114 |
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