Identifier | G:(DE-H253)II-20100001-EC |
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Conference Presentation
Ion implantation of the 4H SiC homoepitaxial layers and substrates with 2 MeV Se and 1 MeV Al ions
9th International Conference Ion implantation and other applications of ions and electrons, ION 2012, Kazimierz DolnyKazimierz Dolny, Poland, 25 Jun 2012 - 28 Jun 2012
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Poster
Synchrotron diffraction topography of SBN $\mathrm{(Sr_{x}Ba_{1-x}Nb_{2}O_{6})}$ and CBN $\mathrm{(Ca_{x}Ba_{1-x}Nb_{2}O_{6})}$ crystals
11th International Symposium and School on Synchrotron Radiation in Natural Science (ISSRNS-11), Krakow -TyniecKrakow -Tyniec, Poland, 20 May 2012 - 25 May 2012
Bulletin of the Polish Synchrotron Radiation Society Vol.11 (1-2), 2012, 13 (2012)
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Poster
Topographic and high-resolution diffraction study of defect structure of $RVO_4$ single crystals
11th International Symposium and School on Synchrotron Radiation in Natural Science (ISSRNS-11), Krakow -TyniecKrakow -Tyniec, Poland, 20 May 2012 - 25 May 2012
Bulletin of the Polish Synchrotron Radiation Society Vol.11 (1-2), 2012, 13 (2012)
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Journal Article
Characterisation of the Defect Structure in Gadolinum Orthovanadate Single Crystals Grown by the Czochralski Method
Acta physica Polonica / A 121(4), 906-909 (2012) [10.12693/APhysPolA.121.906]
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Journal Article
Synchrotron Topographic Studies of Domain Structure in Czochralski Grown $\mathrm{Pr_{x}La_{1-x}AlO_{3}}$ and $\mathrm{Pr_{x}La_{1-x-y}Mg_{y}AlO_{3}}$ Crystals
Acta physica Polonica / A 121(4), 910 - 914 (2012) [10.12693/APhysPolA.121.910]
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Journal Article
Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates
Acta physica Polonica / A 121(4), 915-919 (2012) [10.12693/APhysPolA.121.915]
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All known publications ...
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