http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Ion implantation of the 4H SiC homoepitaxial layers and substrates with 2 MeV Se and 1 MeV Al ions
Wierzchowski, W. ; Turos, A. ; Wieteska, K. ; Stonert, A. ; Ratajczak, R. ; Jozwik, P. ; Wilhelm, R. ; Akhamadaliev, S. ; Mazur, K. ; Paulman, C. ; DESY
2012
20129th International Conference Ion implantation and other applications of ions and electrons, ION 2012, Kazimierz DolnyKazimierz Dolny, Poland, 25 Jun 2012 - 28 Jun 20122012-06-252012-06-28
Contributing Institute(s):
- Experiments with synchrotron radiation (HASYLAB(-2012))
Research Program(s):
- DORIS Beamline E2 (POF2-54G13) (POF2-54G13)
- DORIS Beamline F1 (POF2-54G13) (POF2-54G13)
- FS-Proposal: II-20100001 EC (II-20100001-EC) (II-20100001-EC)
Experiment(s):
- DORIS Beamline F1 (DORIS III)
- DORIS Beamline E2 (DORIS III)
Appears in the scientific report
2012
Database coverage:No Author Disambiguation