Conference Presentation PHPPUBDB-25261

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Ion implantation of the 4H SiC homoepitaxial layers and substrates with 2 MeV Se and 1 MeV Al ions

 ;  ;  ;  ;  ;  ;  ;  ;  ;  ; DESY

2012

9th International Conference Ion implantation and other applications of ions and electrons, ION 2012, Kazimierz DolnyKazimierz Dolny, Poland, 25 Jun 2012 - 28 Jun 20122012-06-252012-06-28  GO


Contributing Institute(s):
  1. Experiments with synchrotron radiation (HASYLAB(-2012))
Research Program(s):
  1. DORIS Beamline E2 (POF2-54G13) (POF2-54G13)
  2. DORIS Beamline F1 (POF2-54G13) (POF2-54G13)
  3. FS-Proposal: II-20100001 EC (II-20100001-EC) (II-20100001-EC)
Experiment(s):
  1. DORIS Beamline F1 (DORIS III)
  2. DORIS Beamline E2 (DORIS III)

Appears in the scientific report 2012
Database coverage:
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 Record created 2013-01-22, last modified 2015-10-30



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