Journal Article

PHPPUBDB-23963

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates

Wierzchowski, W. ; Wieteska, K. ; Mazur, K. ; Kosciewicz, K. ; Balcer, T. ; Strupinski, W. ; Paulmann, C. ; DESY

2012
Acad. Inst. Warsaw

This record in other databases:  

Please use a persistent id in citations: doi:10.12693/APhysPolA.121.915

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Contributing Institute(s):

1. Experiments with synchrotron radiation (HASYLAB(-2012))

Research Program(s):

1. DORIS Beamline E2 (POF2-54G13) (POF2-54G13)
2. DORIS Beamline F1 (POF2-54G13) (POF2-54G13)
3. FS-Proposal: II-20100001 EC (II-20100001-EC) (II-20100001-EC)

Experiment(s):

1. DORIS Beamline E2 (DORIS III)
2. DORIS Beamline F1 (DORIS III)

Appears in the scientific report 2012

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Database coverage:
No Author Disambiguation

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