| Home > Publications database > Surface termination of $\beta$-Ga$_2$O$_3$(100) as-cleaved single crystals |
| Typ | Amount | VAT | Currency | Share | Status | Cost centre |
| Hybrid-OA | 0.00 | 0.00 | EUR | (Publish and Read) | 810 / 476152 | |
| Hybrid-OA | -1400.00 | 0.00 | EUR | (Storniert) | 810 / 476152 | |
| Hybrid-OA | 1400.00 | 0.00 | EUR | (Bestellt) | 28902 / 476152 | |
| Sum | 0.00 | 0.00 | EUR | |||
| Total | 0.00 |
| Journal Article | PUBDB-2025-04090 |
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2026
American Inst. of Physics
Melville, NY
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Please use a persistent id in citations: doi:10.1063/5.0309937 doi:10.3204/PUBDB-2025-04090
Abstract: The surface of $\beta$-Ga$_2$O$_3$ single crystals cleaved along their (100) plane is investigated using surface X-ray diffraction and atomic force microscopy. The results show that the crystal cleaves at planes formed by edge-sharing oxygen octahedra, thereby breaking the longest and weakest Ga-O bonds. As a consequence, the exposed (100) surface is non-polar in nature. Owing to the crystal symmetry, terraces separated by half the a-axis length of approx. 0.6 nm are formed. These results are important in view of the use of $\beta$-Ga$_2$O$_3$ in thin film form, as exfoliated nano-belts or as nanoribbons in semiconductor high-power applications.
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