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100 1 _ |a Kao, Ming-Chao
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245 _ _ |a Surface termination of $\beta$-Ga$_2$O$_3$(100) as-cleaved single crystals
260 _ _ |a Melville, NY
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520 _ _ |a The surface of $\beta$-Ga$_2$O$_3$ single crystals cleaved along their (100) plane is investigated using surface X-ray diffraction and atomic force microscopy. The results show that the crystal cleaves at planes formed by edge-sharing oxygen octahedra, thereby breaking the longest and weakest Ga-O bonds. As a consequence, the exposed (100) surface is non-polar in nature. Owing to the crystal symmetry, terraces separated by half the a-axis length of approx. 0.6 nm are formed. These results are important in view of the use of $\beta$-Ga$_2$O$_3$ in thin film form, as exfoliated nano-belts or as nanoribbons in semiconductor high-power applications.
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700 1 _ |a Schewe, Lukas
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