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@ARTICLE{Kao:638523,
      author       = {Kao, Ming-Chao and Schewe, Lukas and Akhtar, Arub and Vlad,
                      Alina and Keller, Thomas F. and Henkel, Karsten and Anooz,
                      Saud Bin and Popp, Andreas and Galazka, Zbigniew and Flege,
                      Jan Ingo and Stierle, Andreas and Vonk, Vedran},
      title        = {{S}urface termination of $\beta$-{G}a$_2${O}$_3$(100)
                      as-cleaved single crystals},
      journal      = {Applied physics letters},
      volume       = {128},
      number       = {7},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {PUBDB-2025-04090},
      pages        = {071601},
      year         = {2026},
      abstract     = {The surface of $\beta$-Ga$_2$O$_3$ single crystals cleaved
                      along their (100) plane is investigated using surface X-ray
                      diffraction and atomic force microscopy. The results show
                      that the crystal cleaves at planes formed by edge-sharing
                      oxygen octahedra, thereby breaking the longest and weakest
                      Ga-O bonds. As a consequence, the exposed (100) surface is
                      non-polar in nature. Owing to the crystal symmetry, terraces
                      separated by half the a-axis length of approx. 0.6 nm are
                      formed. These results are important in view of the use of
                      $\beta$-Ga$_2$O$_3$ in thin film form, as exfoliated
                      nano-belts or as nanoribbons in semiconductor high-power
                      applications.},
      cin          = {FS-NL},
      ddc          = {530},
      cid          = {I:(DE-H253)FS-NL-20120731},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / DFG project G:(GEPRIS)491040331 -
                      MOVPE-Wachstum und Charakterisierung dünner
                      (AlxGa1-x)2O3-Filme für Hochleistungsbauelemente
                      (491040331)},
      pid          = {G:(DE-HGF)POF4-632 / G:(GEPRIS)491040331},
      experiment   = {EXP:(DE-H253)Nanolab-04-20150101 /
                      EXP:(DE-H253)Nanolab-03-20150101 /
                      EXP:(DE-H253)Nanolab-01-20150101 /
                      EXP:(DE-H253)Nanolab-02-20150101 /
                      EXP:(DE-MLZ)External-20140101},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1063/5.0309937},
      url          = {https://bib-pubdb1.desy.de/record/638523},
}