TY  - JOUR
AU  - Kao, Ming-Chao
AU  - Schewe, Lukas
AU  - Akhtar, Arub
AU  - Vlad, Alina
AU  - Keller, Thomas F.
AU  - Henkel, Karsten
AU  - Anooz, Saud Bin
AU  - Popp, Andreas
AU  - Galazka, Zbigniew
AU  - Flege, Jan Ingo
AU  - Stierle, Andreas
AU  - Vonk, Vedran
TI  - Surface termination of β-Ga<sub>2</sub>O<sub>3</sub>(100) as-cleaved single crystals
JO  - Applied physics letters
VL  - 128
IS  - 7
SN  - 0003-6951
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - PUBDB-2025-04090
SP  - 071601
PY  - 2026
AB  - The surface of β-Ga<sub>2</sub>O<sub>3</sub> single crystals cleaved along their (100) plane is investigated using surface X-ray diffraction and atomic force microscopy. The results show that the crystal cleaves at planes formed by edge-sharing oxygen octahedra, thereby breaking the longest and weakest Ga-O bonds. As a consequence, the exposed (100) surface is non-polar in nature. Owing to the crystal symmetry, terraces separated by half the a-axis length of approx. 0.6 nm are formed. These results are important in view of the use of β-Ga<sub>2</sub>O<sub>3</sub> in thin film form, as exfoliated nano-belts or as nanoribbons in semiconductor high-power applications.
LB  - PUB:(DE-HGF)16
DO  - DOI:10.1063/5.0309937
UR  - https://bib-pubdb1.desy.de/record/638523
ER  -