Home > Publications database > Tailoring p-Type Behavior in ZnO Quantum Dots through Enhanced Sol–Gel Synthesis: Mechanistic Insights into Zinc Vacancies |
Journal Article | PUBDB-2024-05900 |
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2024
ACS
Washington, DC
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Please use a persistent id in citations: doi:10.1021/acs.jpclett.3c03519 doi:10.3204/PUBDB-2024-05900
Abstract: The synthesis and control of properties of p-type ZnO iscrucial for a variety of optoelectronic and spintronic applications;however, it remains challenging due to the control of intrinsic midgap(defect) states. In this study, we demonstrate a synthetic route to yieldcolloidal ZnO quantum dots (QD) via an enhanced sol−gel processthat effectively eliminates the residual intermediate reaction molecules,which would otherwise weaken the excitonic emission. This processsupports the creation of ZnO with p-type properties or compensationof inherited n-type defects, primarily due to zinc vacancies underoxygen-rich conditions. The in-depth analysis of carrier recombinationin the midgap across several time scales reveals microsecond carrierlifetimes at room temperature which are expected to occur via zinc vacancy defects, supporting the promoted p-type character of thesynthesized ZnO QDs.
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