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@ARTICLE{Kahraman:614554,
      author       = {Kahraman, Abdullah and Socie, Etienne and Nazari, Maryam
                      and Kazazis, Dimitrios and Buldu-Akturk, Merve and Kabanova,
                      Victoria and Biasin, Elisa and Smolentsev, Grigory and
                      Grolimund, Daniel and Erdem, Emre and Moser, Jacques E. and
                      Cannizzo, Andrea and Bacellar Cases da Silveira, Camila and
                      Milne, Christopher},
      title        = {{T}ailoring p-{T}ype {B}ehavior in {Z}n{O} {Q}uantum {D}ots
                      through {E}nhanced {S}ol–{G}el {S}ynthesis: {M}echanistic
                      {I}nsights into {Z}inc {V}acancies},
      journal      = {The journal of physical chemistry letters},
      volume       = {15},
      number       = {6},
      issn         = {1948-7185},
      address      = {Washington, DC},
      publisher    = {ACS},
      reportid     = {PUBDB-2024-05900},
      pages        = {1755-1764},
      year         = {2024},
      abstract     = {The synthesis and control of properties of p-type ZnO
                      iscrucial for a variety of optoelectronic and spintronic
                      applications;however, it remains challenging due to the
                      control of intrinsic midgap(defect) states. In this study,
                      we demonstrate a synthetic route to yieldcolloidal ZnO
                      quantum dots (QD) via an enhanced sol−gel processthat
                      effectively eliminates the residual intermediate reaction
                      molecules,which would otherwise weaken the excitonic
                      emission. This processsupports the creation of ZnO with
                      p-type properties or compensationof inherited n-type
                      defects, primarily due to zinc vacancies underoxygen-rich
                      conditions. The in-depth analysis of carrier recombinationin
                      the midgap across several time scales reveals microsecond
                      carrierlifetimes at room temperature which are expected to
                      occur via zinc vacancy defects, supporting the promoted
                      p-type character of thesynthesized ZnO QDs.},
      cin          = {$XFEL_E1_FXE$},
      ddc          = {530},
      cid          = {$I:(DE-H253)XFEL_E1_FXE-20210408$},
      pnm          = {6G13 - Accelerator of European XFEL (POF4-6G13)},
      pid          = {G:(DE-HGF)POF4-6G13},
      experiment   = {EXP:(DE-H253)XFEL-Exp-20150101},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:38324709},
      UT           = {WOS:001163436500001},
      doi          = {10.1021/acs.jpclett.3c03519},
      url          = {https://bib-pubdb1.desy.de/record/614554},
}