%0 Journal Article
%A Kahraman, Abdullah
%A Socie, Etienne
%A Nazari, Maryam
%A Kazazis, Dimitrios
%A Buldu-Akturk, Merve
%A Kabanova, Victoria
%A Biasin, Elisa
%A Smolentsev, Grigory
%A Grolimund, Daniel
%A Erdem, Emre
%A Moser, Jacques E.
%A Cannizzo, Andrea
%A Bacellar Cases da Silveira, Camila
%A Milne, Christopher
%T Tailoring p-Type Behavior in ZnO Quantum Dots through Enhanced Sol–Gel Synthesis: Mechanistic Insights into Zinc Vacancies
%J The journal of physical chemistry letters
%V 15
%N 6
%@ 1948-7185
%C Washington, DC
%I ACS
%M PUBDB-2024-05900
%P 1755-1764
%D 2024
%X The synthesis and control of properties of p-type ZnO iscrucial for a variety of optoelectronic and spintronic applications;however, it remains challenging due to the control of intrinsic midgap(defect) states. In this study, we demonstrate a synthetic route to yieldcolloidal ZnO quantum dots (QD) via an enhanced sol−gel processthat effectively eliminates the residual intermediate reaction molecules,which would otherwise weaken the excitonic emission. This processsupports the creation of ZnO with p-type properties or compensationof inherited n-type defects, primarily due to zinc vacancies underoxygen-rich conditions. The in-depth analysis of carrier recombinationin the midgap across several time scales reveals microsecond carrierlifetimes at room temperature which are expected to occur via zinc vacancy defects, supporting the promoted p-type character of thesynthesized ZnO QDs.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:38324709
%U <Go to ISI:>//WOS:001163436500001
%R 10.1021/acs.jpclett.3c03519
%U https://bib-pubdb1.desy.de/record/614554