Journal Article/Contribution to a conference proceedings

PUBDB-2024-05460

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors

Ninca, I. S. (Corresponding author)Extern*DESY* ; Bloch, I.DESY* ; Brüers, B.Extern*DESY* ; Fadeyev, V. ; Fernandez-Tejero, J. ; Jessiman, C. ; Keller, J. ; Klein, C. T. ; Koffas, T. ; Lacker, H. M. ; Li, P. ; Scharf, C. ; Staats, E. ; Ullan, M. ; Unno, Y.

2024
Elsevier [Amsterdam]

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Please use a persistent id in citations: doi:10.1016/j.nima.2024.169729  doi:10.3204/PUBDB-2024-05460

Abstract: The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated.

Keyword(s): ATLAS experiment ; Silicon sensors ; TCAD simulations ; Top-TCT

Note: L:MB

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Contributing Institute(s):

1. Z_ATUP (Z_ATUP)
2. LHC/ATLAS Experiment (ATLAS)

Research Program(s):

1. 611 - Fundamental Particles and Forces (POF4-611) (POF4-611)

Experiment(s):

1. LHC: ATLAS

Appears in the scientific report 2024

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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