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000612786 1001_ $$0P:(DE-H253)PIP1095238$$aNinca, Ilona Stefana$$b0$$eCorresponding author
000612786 1112_ $$a13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors$$cVancouver$$d2023-12-03 - 2023-12-08$$gHSTD13$$wGermany
000612786 245__ $$aTCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors
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000612786 520__ $$aThe breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated.
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000612786 7001_ $$0P:(DE-H253)PIP1014657$$aBloch, I.$$b1$$udesy
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000612786 7001_ $$aFadeyev, V.$$b3
000612786 7001_ $$aFernandez-Tejero, J.$$b4
000612786 7001_ $$aJessiman, C.$$b5
000612786 7001_ $$aKeller, J.$$b6
000612786 7001_ $$aKlein, C. T.$$b7
000612786 7001_ $$aKoffas, T.$$b8
000612786 7001_ $$aLacker, H. M.$$b9
000612786 7001_ $$aLi, P.$$b10
000612786 7001_ $$aScharf, C.$$b11
000612786 7001_ $$aStaats, E.$$b12
000612786 7001_ $$aUllan, M.$$b13
000612786 7001_ $$aUnno, Y.$$b14
000612786 773__ $$0PERI:(DE-600)1466532-3$$a10.1016/j.nima.2024.169729$$gVol. 1067, p. 169729 -$$p169729 -$$tNuclear instruments & methods in physics research / Section A$$v1067$$x0167-5087$$y2024
000612786 7870_ $$0PUBDB-2024-07369$$aNinca, Ilona Stefana et.al.$$dAmsterdam : North-Holland Publ. Co., 2024$$iIsMemberOf$$tTCAD simulations of humidity-induced breakdown of silicon sensors
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