TY  - CONF
AU  - Ninca, Ilona Stefana
AU  - Bloch, I.
AU  - Brüers, B.
AU  - Fadeyev, V.
AU  - Fernandez-Tejero, J.
AU  - Jessiman, C.
AU  - Keller, J.
AU  - Klein, C. T.
AU  - Koffas, T.
AU  - Lacker, H. M.
AU  - Li, P.
AU  - Scharf, C.
AU  - Staats, E.
AU  - Ullan, M.
AU  - Unno, Y.
TI  - TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors
JO  - Nuclear instruments & methods in physics research / Section A
VL  - 1067
SN  - 0167-5087
CY  - [Amsterdam]
PB  - Elsevier
M1  - PUBDB-2024-05460
SP  - 169729 -
PY  - 2024
N1  - L:MB
AB  - The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated.
T2  - 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors
CY  - 3 Dec 2023 - 8 Dec 2023, Vancouver (Germany)
Y2  - 3 Dec 2023 - 8 Dec 2023
M2  - Vancouver, Germany
KW  - ATLAS experiment (autogen)
KW  - Silicon sensors (autogen)
KW  - TCAD simulations (autogen)
KW  - Top-TCT (autogen)
LB  - PUB:(DE-HGF)16 ; PUB:(DE-HGF)8
UR  - <Go to ISI:>//WOS:001296234400001
DO  - DOI:10.1016/j.nima.2024.169729
UR  - https://bib-pubdb1.desy.de/record/612786
ER  -