Home > Publications database > Wake-Up Free Ultrathin Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Films |
Journal Article | PUBDB-2023-07132 |
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2023
MDPI
Basel
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Please use a persistent id in citations: doi:10.3390/nano13212825 doi:10.3204/PUBDB-2023-07132
Abstract: The development of the new generation of non-volatile high-density ferroelectric memory requires the utilization of ultrathin ferroelectric films. The most promising candidates are polycrystalline-doped HfO$_2$ films because of their perfect compatibility with silicon technology and excellent ferroelectric properties. However, the remanent polarization of HfO$_2$ films is known to degrade when their thickness is reduced to a few nanometers. One of the reasons for this phenomenon is the wake-up effect, which is more pronounced in the thinner the film. For the ultrathin HfO$_2$ films, it can be so long-lasting that degradation occurs even before the wake-up procedure is completed. In this work, an approach to suppress the wake-up in ultrathin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is elucidated. By engineering internal built-in fields in an as-prepared structure, a stable ferroelectricity without a wake-up effect is induced in 4.5 nm thick Hf$_{0.5}$Zr$_{0.5}$O$_2$ film. By analysis of the functional characteristics of ferroelectric structures with a different pattern of internal built-in fields and their comparison with the results of in situ piezoresponse force microscopy and synchrotron X-ray micro-diffraction, the important role of built-in fields in ferroelectricity of ultrathin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films as well as the origin of stable ferroelectric properties is revealed.
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