Journal Article PUBDB-2023-07132

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Wake-Up Free Ultrathin Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Films

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2023
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Nanomaterials 13(21), 2825 () [10.3390/nano13212825]
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Abstract: The development of the new generation of non-volatile high-density ferroelectric memory requires the utilization of ultrathin ferroelectric films. The most promising candidates are polycrystalline-doped HfO$_2$ films because of their perfect compatibility with silicon technology and excellent ferroelectric properties. However, the remanent polarization of HfO$_2$ films is known to degrade when their thickness is reduced to a few nanometers. One of the reasons for this phenomenon is the wake-up effect, which is more pronounced in the thinner the film. For the ultrathin HfO$_2$ films, it can be so long-lasting that degradation occurs even before the wake-up procedure is completed. In this work, an approach to suppress the wake-up in ultrathin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is elucidated. By engineering internal built-in fields in an as-prepared structure, a stable ferroelectricity without a wake-up effect is induced in 4.5 nm thick Hf$_{0.5}$Zr$_{0.5}$O$_2$ film. By analysis of the functional characteristics of ferroelectric structures with a different pattern of internal built-in fields and their comparison with the results of in situ piezoresponse force microscopy and synchrotron X-ray micro-diffraction, the important role of built-in fields in ferroelectricity of ultrathin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films as well as the origin of stable ferroelectric properties is revealed.

Classification:

Note: Russische Institute beteiligt!

Contributing Institute(s):
  1. DOOR-User (DOOR ; HAS-User)
Research Program(s):
  1. 6G3 - PETRA III (DESY) (POF4-6G3) (POF4-6G3)
  2. FS-Proposal: I-20190533 (I-20190533) (I-20190533)
Experiment(s):
  1. PETRA Beamline P23 (PETRA III)

Appears in the scientific report 2023
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 Record created 2023-11-22, last modified 2025-07-24


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