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@ARTICLE{Chouprik:599054,
      author       = {Chouprik, Anastasia and Mikheev, Vitalii and Korostylev,
                      Evgeny and Kozodaev, Maxim and Zarubin, Sergey and Vinnik,
                      Denis and Gudkova, Svetlana and Negrov, Dmitriy},
      title        = {{W}ake-{U}p {F}ree {U}ltrathin {F}erroelectric
                      {H}f$_{0.5}${Z}r$_{0.5}${O}$_2$ {F}ilms},
      journal      = {Nanomaterials},
      volume       = {13},
      number       = {21},
      issn         = {2079-4991},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {PUBDB-2023-07132},
      pages        = {2825},
      year         = {2023},
      note         = {Russische Institute beteiligt!},
      abstract     = {The development of the new generation of non-volatile
                      high-density ferroelectric memory requires the utilization
                      of ultrathin ferroelectric films. The most promising
                      candidates are polycrystalline-doped HfO$_2$ films because
                      of their perfect compatibility with silicon technology and
                      excellent ferroelectric properties. However, the remanent
                      polarization of HfO$_2$ films is known to degrade when their
                      thickness is reduced to a few nanometers. One of the reasons
                      for this phenomenon is the wake-up effect, which is more
                      pronounced in the thinner the film. For the ultrathin
                      HfO$_2$ films, it can be so long-lasting that degradation
                      occurs even before the wake-up procedure is completed. In
                      this work, an approach to suppress the wake-up in ultrathin
                      Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is elucidated. By
                      engineering internal built-in fields in an as-prepared
                      structure, a stable ferroelectricity without a wake-up
                      effect is induced in 4.5 nm thick Hf$_{0.5}$Zr$_{0.5}$O$_2$
                      film. By analysis of the functional characteristics of
                      ferroelectric structures with a different pattern of
                      internal built-in fields and their comparison with the
                      results of in situ piezoresponse force microscopy and
                      synchrotron X-ray micro-diffraction, the important role of
                      built-in fields in ferroelectricity of ultrathin
                      Hf$_{0.5}$Zr$_{0.5}$O$_2$ films as well as the origin of
                      stable ferroelectric properties is revealed.},
      cin          = {DOOR ; HAS-User},
      ddc          = {540},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {6G3 - PETRA III (DESY) (POF4-6G3) / FS-Proposal: I-20190533
                      (I-20190533)},
      pid          = {G:(DE-HGF)POF4-6G3 / G:(DE-H253)I-20190533},
      experiment   = {EXP:(DE-H253)P-P23-20150101},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {37947671},
      UT           = {WOS:001103267500001},
      doi          = {10.3390/nano13212825},
      url          = {https://bib-pubdb1.desy.de/record/599054},
}