%0 Journal Article
%A Chouprik, Anastasia
%A Mikheev, Vitalii
%A Korostylev, Evgeny
%A Kozodaev, Maxim
%A Zarubin, Sergey
%A Vinnik, Denis
%A Gudkova, Svetlana
%A Negrov, Dmitriy
%T Wake-Up Free Ultrathin Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films
%J Nanomaterials
%V 13
%N 21
%@ 2079-4991
%C Basel
%I MDPI
%M PUBDB-2023-07132
%P 2825 
%D 2023
%Z Russische Institute beteiligt! 
%X The development of the new generation of non-volatile high-density ferroelectric memory requires the utilization of ultrathin ferroelectric films. The most promising candidates are polycrystalline-doped HfO<sub>2</sub> films because of their perfect compatibility with silicon technology and excellent ferroelectric properties. However, the remanent polarization of HfO<sub>2</sub> films is known to degrade when their thickness is reduced to a few nanometers. One of the reasons for this phenomenon is the wake-up effect, which is more pronounced in the thinner the film. For the ultrathin HfO<sub>2</sub> films, it can be so long-lasting that degradation occurs even before the wake-up procedure is completed. In this work, an approach to suppress the wake-up in ultrathin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films is elucidated. By engineering internal built-in fields in an as-prepared structure, a stable ferroelectricity without a wake-up effect is induced in 4.5 nm thick Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film. By analysis of the functional characteristics of ferroelectric structures with a different pattern of internal built-in fields and their comparison with the results of in situ piezoresponse force microscopy and synchrotron X-ray micro-diffraction, the important role of built-in fields in ferroelectricity of ultrathin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films as well as the origin of stable ferroelectric properties is revealed.   
%F PUB:(DE-HGF)16
%9 Journal Article
%$ 37947671
%U <Go to ISI:>//WOS:001103267500001
%R 10.3390/nano13212825
%U https://bib-pubdb1.desy.de/record/599054