Comparison of different sensor thicknesses and substrate materials for themonolithic small collection-electrode technology demonstrator CLICTD

Dort, Katharina; Huth, Lennart; Braach, Justus; Munker, Magdalena; Kroeger, Jens; Ballabriga, Rafael; Dannheim, Dominik; Snoeys, Walter; Kremastiotis, Iraklis; Švihra, Peter; Linssen, Lucie; Buschmann, Eric; Vanat, Tomas; Spannagel, Simon; Campbell, Michael

doi:10.1016/j.nima.2022.167413

Journal Article

PUBDB-2022-01487

Comparison of different sensor thicknesses and substrate materials for themonolithic small collection-electrode technology demonstrator CLICTD

Dort, K. (Corresponding author)Extern* ; Ballabriga, R. ; Braach, J.Extern* ; Buschmann, E. ; Campbell, M. ; Dannheim, D.Extern* ; Huth, L.DESY* ; Kremastiotis, I.Extern* ; Kroeger, J.Extern* ; Linssen, L. ; Munker, M. ; Snoeys, W. ; Spannagel, S.DESY* ; Švihra, P. ; Vanat, T.Extern*DESY*

2022
North-Holland Publ. Co. Amsterdam

Nuclear instruments & methods in physics research / A 1041, 167413 - (2022) [10.1016/j.nima.2022.167413]

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Please use a persistent id in citations: doi:10.1016/j.nima.2022.167413 doi:10.3204/PUBDB-2022-01487

Report No.: arXiv:2204.10569

Abstract: Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.

Keyword(s): High-resistivity Czochralski silicon ; Inclined particle tracks ; Monolithic silicon sensor ; Small collection-electrode design

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ddc:530

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Appears in the scientific report 2022

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