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000475889 088__ $$2arXiv$$aarXiv:2204.10569
000475889 1001_ $$0P:(DE-H253)PIP1083579$$aDort, Katharina$$b0$$eCorresponding author
000475889 245__ $$aComparison of different sensor thicknesses and substrate materials for themonolithic small collection-electrode technology demonstrator CLICTD
000475889 260__ $$aAmsterdam$$bNorth-Holland Publ. Co.$$c2022
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000475889 520__ $$aSmall collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.
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000475889 650_7 $$2autogen$$aHigh-resistivity Czochralski silicon
000475889 650_7 $$2autogen$$aInclined particle tracks
000475889 650_7 $$2autogen$$aMonolithic silicon sensor
000475889 650_7 $$2autogen$$aSmall collection-electrode design
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000475889 7001_ $$0R.Ballabriga.1$$aBallabriga, Rafael$$b1
000475889 7001_ $$0P:(DE-H253)PIP1091551$$aBraach, Justus$$b2
000475889 7001_ $$0E.Buschmann.1$$aBuschmann, Eric$$b3
000475889 7001_ $$0Michael.Campbell.1$$aCampbell, Michael$$b4
000475889 7001_ $$0P:(DE-H253)PIP1087629$$aDannheim, Dominik$$b5
000475889 7001_ $$0P:(DE-H253)PIP1024990$$aHuth, Lennart$$b6$$udesy
000475889 7001_ $$0P:(DE-H253)PIP1090808$$aKremastiotis, Iraklis$$b7
000475889 7001_ $$0P:(DE-H253)PIP1031958$$aKroeger, Jens$$b8
000475889 7001_ $$0L.Linssen.1$$aLinssen, Lucie$$b9
000475889 7001_ $$aMunker, Magdalena$$b10
000475889 7001_ $$0W.Snoeys.1$$aSnoeys, Walter$$b11
000475889 7001_ $$0P:(DE-H253)PIP1018940$$aSpannagel, Simon$$b12
000475889 7001_ $$0P.Svihra.1$$aŠvihra, Peter$$b13
000475889 7001_ $$0P:(DE-H253)PIP1087423$$aVanat, Tomas$$b14
000475889 773__ $$0PERI:(DE-600)1466532-3$$a10.1016/j.nima.2022.167413$$gp. 167413 -$$p167413 -$$tNuclear instruments & methods in physics research / A$$v1041$$x0168-9002$$y2022
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