%0 Journal Article
%A Dort, Katharina
%A Ballabriga, Rafael
%A Braach, Justus
%A Buschmann, Eric
%A Campbell, Michael
%A Dannheim, Dominik
%A Huth, Lennart
%A Kremastiotis, Iraklis
%A Kroeger, Jens
%A Linssen, Lucie
%A Munker, Magdalena
%A Snoeys, Walter
%A Spannagel, Simon
%A Švihra, Peter
%A Vanat, Tomas
%T Comparison of different sensor thicknesses and substrate materials for themonolithic small collection-electrode technology demonstrator CLICTD
%J Nuclear instruments & methods in physics research / A
%V 1041
%N arXiv:2204.10569
%@ 0168-9002
%C Amsterdam
%I North-Holland Publ. Co.
%M PUBDB-2022-01487
%M arXiv:2204.10569
%P 167413 -
%D 2022
%X Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.
%K High-resistivity Czochralski silicon (autogen)
%K Inclined particle tracks (autogen)
%K Monolithic silicon sensor (autogen)
%K Small collection-electrode design (autogen)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000862585900006
%R 10.1016/j.nima.2022.167413
%U https://bib-pubdb1.desy.de/record/475889