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| Home > Publications database > ATLAS17LS – A large-format prototype silicon strip sensor for long-strip barrel section of ATLAS ITk strip detector |
| Journal Article | PUBDB-2021-00146 |
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2021
North-Holland Publ. Co.
Amsterdam
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Please use a persistent id in citations: doi:10.1016/j.nima.2020.164928
Abstract: The ATLAS experiment is going to replace the current Inner Detector with an all new inner tracker (ITk) in the ATLAS detector for HL-LHC at CERN. Silicon strip detectors cover the outer layers of the barrel and the endcap sections. We have designed and fabricated a prototype single-sided n + -in-p AC-coupled silicon strip sensor for the outer barrel layer with long strips (LS), ATLAS17LS. It is of the maximum allowable size to fit in a 6-in. silicon wafer, with an outer dimension of 9.80 (width) × 9.76 (length) cm$^2$. The sensor features two rows of LS strip segments, 4.83 cm strip length per segment, a strip pitch of 75.5 μm , and a slim edge design. We have implemented technology for high voltage operation of up to 1000 V, with a good signal collection after irradiation fluence of 5.6 × 10$^{14}$ n$_{eq}$∕cm$^2$ at the end of HL-LHC operation. We had two objectives for the ATLAS17LS fabrication: qualification of the sensor design and fabrication quality, and providing an adequate number of the sensors for prototyping the building blocks of the strip detector. The sensors were fabricated in 3 batches by HPK with standard wafers from the foundry (320 $\mu m$ physical thickness). Additional 10 sensors were fabricated with a thinner active thickness of 240 $\mu m$ to investigate the influence of active thickness on charge collection. Another additional 5 sensors, with special passivation to investigate the influence of passivation on humidity sensitivity. The visual inspection of fabricated sensors revealed an inadequacy that the designed metal width of 10 $\mu m$ was too narrow. The initial measurements by the vendor showed that the sensors fulfilled the specifications: onset voltages of Microdischarge $V_{MD}$ above the operation voltage $V_{OP}$ (700 V for the 1st and 2nd batches; 500 V for the 3rd batch, which has improved the yield), leakage currents of < 0.1 $\mu$A/cm$^2$ at $V_{OP}$, full depletion voltages $V_{FD}$ < 330 V, and rates of bad strips << 1%.
Keyword(s): * Automatic Keywords * ; dimension: 9 ; silicon ; ATLAS ; tracking detector ; irradiation ; CERN Lab ; n-in-p ; p-type ; Strip ; Silicon ; Radiation tolerant ; HL-LHC
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