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@ARTICLE{Unno:453755,
      author       = {Unno, Y. and Abo, Y. and Affolder, A. and Allport, P. and
                      Bloch, I. and Blue, A. and Fadeyev, V. and Fernandez-Tejero,
                      J. and Gregor, I. and Haber, C. and Hara, K. and Hommels, B.
                      and Kamada, S. and Koffas, T. and Lacker, H. and Miyagawa,
                      P. S. and Parzefall, U. and Sawyer, C. A. and Ullan, M. and
                      Yamamura, K. and Zhu, H.},
      title        = {{ATLAS}17{LS} – {A} large-format prototype silicon strip
                      sensor for long-strip barrel section of {ATLAS} {IT}k strip
                      detector},
      journal      = {Nuclear instruments $\&$ methods in physics research / A},
      volume       = {989},
      issn         = {0168-9002},
      address      = {Amsterdam},
      publisher    = {North-Holland Publ. Co.},
      reportid     = {PUBDB-2021-00146},
      pages        = {164928},
      year         = {2021},
      note         = {Waiting for fulltext},
      abstract     = {The ATLAS experiment is going to replace the current Inner
                      Detector with an all new inner tracker (ITk) in the ATLAS
                      detector for HL-LHC at CERN. Silicon strip detectors cover
                      the outer layers of the barrel and the endcap sections. We
                      have designed and fabricated a prototype single-sided n +
                      -in-p AC-coupled silicon strip sensor for the outer barrel
                      layer with long strips (LS), ATLAS17LS. It is of the maximum
                      allowable size to fit in a 6-in. silicon wafer, with an
                      outer dimension of 9.80 (width) × 9.76 (length) cm$^2$. The
                      sensor features two rows of LS strip segments, 4.83 cm
                      strip length per segment, a strip pitch of 75.5  μm , and
                      a slim edge design. We have implemented technology for high
                      voltage operation of up to 1000 V, with a good signal
                      collection after irradiation fluence of 5.6 × 10$^{14}$
                      n$_{eq}$∕cm$^2$ at the end of HL-LHC operation. We had two
                      objectives for the ATLAS17LS fabrication: qualification of
                      the sensor design and fabrication quality, and providing an
                      adequate number of the sensors for prototyping the building
                      blocks of the strip detector. The sensors were fabricated in
                      3 batches by HPK with standard wafers from the foundry (320
                      $\mu m$ physical thickness). Additional 10 sensors were
                      fabricated with a thinner active thickness of 240 $\mu m$ to
                      investigate the influence of active thickness on charge
                      collection. Another additional 5 sensors, with special
                      passivation to investigate the influence of passivation on
                      humidity sensitivity. The visual inspection of fabricated
                      sensors revealed an inadequacy that the designed metal width
                      of 10 $\mu m$ was too narrow. The initial measurements by
                      the vendor showed that the sensors fulfilled the
                      specifications: onset voltages of Microdischarge $V_{MD}$
                      above the operation voltage $V_{OP}$ (700 V for the 1st and
                      2nd batches; 500 V for the 3rd batch, which has improved the
                      yield), leakage currents of < 0.1 $\mu$A/cm$^2$ at $V_{OP}$,
                      full depletion voltages $V_{FD}$ < 330 V, and rates of bad
                      strips << 1\%.},
      keywords     = {* Automatic Keywords * (INSPIRE) / dimension: 9 (INSPIRE) /
                      silicon (INSPIRE) / ATLAS (INSPIRE) / tracking detector
                      (INSPIRE) / irradiation (INSPIRE) / CERN Lab (INSPIRE) /
                      n-in-p (autogen) / p-type (autogen) / Strip (autogen) /
                      Silicon (autogen) / Radiation tolerant (autogen) / HL-LHC
                      (autogen)},
      cin          = {ZEU-DLAB},
      ddc          = {530},
      cid          = {I:(DE-H253)ZEU-DLAB-20130226},
      pnm          = {621 - Accelerator Research and Development (POF4-621)},
      pid          = {G:(DE-HGF)POF4-621},
      experiment   = {EXP:(DE-H253)LHC(machine)-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000611928700008},
      doi          = {10.1016/j.nima.2020.164928},
      url          = {https://bib-pubdb1.desy.de/record/453755},
}