Journal Article

PUBDB-2016-03811

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Post deposition annealing of epitaxial $\mathrm{Ce_{1−x}Pr_{x}O_{2-\delta}}$ films grown on Si(111)

Wilkens, H.Extern* ; Spieß, W.Extern* ; Zoellner, M. H. ; Niu, G. ; Schroeder, T. ; Wollschlaeger, J. (Corresponding author)Extern*

2015
RSC Publ. Cambridge

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Please use a persistent id in citations: doi:10.1039/C5CP01105A

Abstract: n this work the structural and morphological changes of Ce$_{1−x}$Pr$_{x}$O$_{2-\delta}$ (x= 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealingtemperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formationvia a polycrystalline intermediate state is observed.

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Contributing Institute(s):

1. DOOR-User (DOOR)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

Experiment(s):

1. DORIS Beamline W1 (DORIS III)

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Database coverage:
; ; ; Allianz-Lizenz / DFG ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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