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000309425 1001_ $$0P:(DE-H253)PIP1010906$$aWilkens, H.$$b0
000309425 245__ $$aPost deposition annealing of epitaxial $\mathrm{Ce_{1−x}Pr_{x}O_{2-\delta}}$ films grown on Si(111)
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000309425 520__ $$an this work the structural and morphological changes of Ce$_{1−x}$Pr$_{x}$O$_{2-\delta}$ (x= 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealingtemperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formationvia a polycrystalline intermediate state is observed.
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000309425 7001_ $$0P:(DE-H253)PIP1017885$$aSpieß, W.$$b1
000309425 7001_ $$0P:(DE-HGF)0$$aZoellner, M. H.$$b2
000309425 7001_ $$0P:(DE-HGF)0$$aNiu, G.$$b3
000309425 7001_ $$0P:(DE-HGF)0$$aSchroeder, T.$$b4
000309425 7001_ $$0P:(DE-H253)PIP1007860$$aWollschlaeger, Joachim$$b5$$eCorresponding author
000309425 773__ $$0PERI:(DE-600)1476244-4$$a10.1039/C5CP01105A$$gVol. 17, no. 15, p. 9991 - 9996$$n15$$p9991 - 9996$$tPhysical chemistry, chemical physics$$v17$$x1463-9084$$y2015
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