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| Home > Publications database > Post deposition annealing of epitaxial $\mathrm{Ce_{1−x}Pr_{x}O_{2-\delta}}$ films grown on Si(111) > print |
| 001 | 309425 | ||
| 005 | 20211110135130.0 | ||
| 024 | 7 | _ | |a 10.1039/C5CP01105A |2 doi |
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| 100 | 1 | _ | |a Wilkens, H. |0 P:(DE-H253)PIP1010906 |b 0 |
| 245 | _ | _ | |a Post deposition annealing of epitaxial $\mathrm{Ce_{1−x}Pr_{x}O_{2-\delta}}$ films grown on Si(111) |
| 260 | _ | _ | |a Cambridge |c 2015 |b RSC Publ. |
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| 520 | _ | _ | |a n this work the structural and morphological changes of Ce$_{1−x}$Pr$_{x}$O$_{2-\delta}$ (x= 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealingtemperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formationvia a polycrystalline intermediate state is observed. |
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| 700 | 1 | _ | |a Spieß, W. |0 P:(DE-H253)PIP1017885 |b 1 |
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| 700 | 1 | _ | |a Niu, G. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Schroeder, T. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Wollschlaeger, Joachim |0 P:(DE-H253)PIP1007860 |b 5 |e Corresponding author |
| 773 | _ | _ | |a 10.1039/C5CP01105A |g Vol. 17, no. 15, p. 9991 - 9996 |0 PERI:(DE-600)1476244-4 |n 15 |p 9991 - 9996 |t Physical chemistry, chemical physics |v 17 |y 2015 |x 1463-9084 |
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